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Potential of the Semiconductor Optical Amplifier (SOA) for Future
Applications
D. I. Forsyth*, A.J Abdullah Al-Gburi
University Technical Malaysia Melaka (UTeM), Jalan Hang Tuah Jaya, 76100 Durian Tunggal, Melaka,
Malaysia
*Corresponding author
DOI: https://dx.doi.org/10.51584/IJRIAS.2025.101000005
Received: 16 September 2025; Accepted: 24 September 2025; Published: 27 October 2025
ABSTRACT
The Semiconductor Optical Amplifier (SOA) has emerged as a transformative technology, poised to influence
the future of optical amplification significantly. While traditionally competing with other types of amplifiers,
such as the bulky and single-functioning erbium-doped fibre amplifier (EDFA), the SOA’s compact size,
multifunctional capabilities and advancing performance metrics position it as a strong candidate for the default
choice in next-generation optical systems. Continuous innovations in efficiency, miniaturization, integration,
cost-effectiveness and manufacturing techniques concerning this device are rapidly overcoming historical
limitations, ensuring its ascendancy in both academic research and industrial applications. This paper explores
the evolution of the SOA, highlighting key advancements in its development and future prospects.
Collectively, all the evidence points to its inevitable dominance in future practical optical communications,
mainly by virtue of its adaptivity, either as a standalone competitive device or with hybrid-like integration with
other types of amplifiers.
Keywords semiconductor optical amplifier, SOA, optical amplification, laser technology, future dominance
INTRODUCTION
The main optical amplifier types currently in use today commercially are the erbium-doped fibre amplifier
(EDFA), the semiconductor optical amplifier (SOA), the Raman amplifier (RA), the thulium-doped fibre
amplifier (TDFA), the praseodymium-doped fibre amplifier (PDFA) and the optical parametric amplifier
(OPA) [1]. Each of these types of optical amplifier operates in its own specialized domain, with minimal
overlap due to fundamental differences in performance, cost and technical suitability [2]. Currently, about 80%
of all amplifiers deployed are EDFAs [3]. The EDFA has been a cornerstone of optical communication
systems since the 1990s, providing high-gain, low-noise amplification for C-band (15301565 nm) and L-band
wavelengths (15651625 nm) [4]. However, as network demands evolve, researchers are exploring alternatives
that could complement or even replace EDFAs in certain scenarios [5]. These C- and L-bandwidth limitations
are incompatible with future networks requiring broader or different spectral ranges (e.g., the O-band for
shorter-reach optics) [6]. Future amplifiers will also need to offer more compatibility and better power
efficiency, crucial for data centres and space-constrained applications [7]. Apart from the SOA, all the other
amplifiers are fibre-based and bulky compared to on-chip amplifiers like the SOA, and emerging technologies
such as coherent optics and free-space optical communications may need different amplification approaches
[8]. The key demands for the amplifier of the future will be driven by future bandwidth requirements,
integration needs and power-efficiency targets utilizing ultra-efficient on-chip amplification [9].
One of the most likely candidates to replace the EDFA in the future is the SOA. At present, the SOA occupies
only about 10% of the market, a trend highly likely to change in the future for many reasons. For example,
SOAs are increasingly used in niche applications such as data centre interconnects [10] and in hybrid systems
that combine EDFAs and Raman amplifiers to extend reach and bandwidth [11]. Unlike EDFAs, SOAs can
provide amplification across the O-band (1310 nm), the E-band, and even into the visible spectrum, making
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them highly suitable for short-reach and silicon photonics applications [12]. Their small footprint and
integration capabilities are particularly advantageous, since SOAs can be monolithically integrated with lasers,
modulators, and detectors on a single chipan essential feature for co-packaged optics and future photonic
interconnects [13]. Being already compact and chip-scale, SOAs are also viewed as promising candidates for
nanophotonics [14] and quantum communication systems [15], where ultra-compact and low-power
amplification is critical. Also, their ultrafast gain dynamics enable many applications in optical switching and
high-speed signal processing [16]. Nevertheless, SOAs currently face challenges such as relatively higher
noise figures (5 to 8 dB, compared to ~4 dB for EDFAs) and nonlinear effects like cross-gain modulation,
which limit their effectiveness in long-haul transmission [17]. With continuous advances in fabrication
techniques and the growing demand for miniaturization, SOAs are expected to dominate short-reach
applications, and potentially challenge EDFAs in future long-haul networks [18].
Moreover, SOAs are not only compact amplifiers but also versatile functional devices due to their nonlinear
gain saturation, enabling applications such as wavelength conversion and regeneration [19]. Since SOAs are
chip-based devices only a few millimeters long, they are much smaller than EDFAs, which require several
meters of doped fibre [2]. Their fast response time further enhances their role in next-generation optical
networks [20] and their integration capabilities [21] make SOAs ideal for various optical signal processing
tasksincluding optical switching [22], fast four-wave mixing (FWM) [23], and signal regeneration [24].
Additionally, SOAs play a vital role in modern optical packet switching systems [25], enabling high-speed data
switching and routing in next-generation network architectures [26]. Their ability to amplify and process
optical packets is instrumental in ensuring efficient data transmission and routing in these advanced systems
[27]. The most fundamental function of an SOA is to boost signals all-opticallysuch as serving as an in-line
all-optical regenerator (2R/3R) or as a pre-amplifier [28]. SOAs are currently essential for maintaining signal
integrity in short-range optical communication systems like MANs and LANs, where they amplify over
relatively short distances [29], [30]. Due to ever-increasing data internet traffic, and hence the need to avoid
bottlenecks, the SOA is increasingly becoming integrated in wavelength conversion functions [31]. This is
internally facilitated through non-linear optical effects; such as cross-gain modulation (XGM) [32], cross-
phase modulation (CPM) [33] and FWM [34]. SOAs can also perform optical logic operations such as AND,
OR, and NOT, using nonlinear interactions and carrier dynamics [35] and perform pulse reshaping [16, 24,
32].
Interestingly, SOAs can also act as broadband light sources by utilizing their amplified spontaneous emission
(ASE), useful in applications like optical sensing and component testing [36]. They can also act as intensity
noise suppressors when saturated to a certain degree - very useful in spectrum-sliced systems. For example,
novel work done in [37] achieved FWM from a total ASE source in an SOA for the first time (both pump and
probe ASE were spectrally sliced from a single broadband source). Although decreasing the gain as a direct
consequence of higher input power, the saturation effects of the SOA considerably reduced the measured
relative-intensity noise (RIN) in the output FWM signal. Work done since with ASE FWM has improved the
technique and practically eliminated polarization effects from the SOA when converting wavelength in such
systems [38].
This paper reviews how the SOA device has changed over the years and its strong potential to dominate in
future optical systems. Section 2 introduces the scope of the device and application ideas. Section 3 reviews
the theory behind the practical workings of the SOA. Section 4 looks at changes in manufacturing trends over
the years. Section 5 reviews former (historical), current (modern), and future (emerging) roles in photonic and
telecommunication systems. Finally, conclusions are made in Section 6.
SCOPE OF THE DEVICE
The SOA these days has become an essential component in photonics and optical communication systems. As
mentioned previously, the device amplifies optical signals directly without the need to convert them to
electrical signals (all-optical), making it ideal for high-speed, high-bandwidth point-to-point systems, such as
signal amplification in C-band dense wavelength divisional multiplexed networks (DWDM) [39]. Their dual
role as amplifiers and all-optical switches also makes them suitable for complex network operations, such as
routing and signal regeneration [19]. Table 1 shows the key steps in the burgeoning evolution of the device
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over time: from initial concepts gained using the semi-diode laser without feedback in the 1970s to present day
deployment in quantum communication and AI-optimized telecom and datacenter systems.
TABLE 1 Timeline of Developments in SOAs
Decade
Development
Stage
Key Innovations
Applications & Impact
1970s
concept & early
research
initial proposals of
optical amplification in
semiconductors
mostly theoretical interest;
foundational work on gain
mechanisms
1980s
first
demonstrations
first practical
demonstrations of
optical gain in
semiconductors
SOA first seen as potential
alternatives to EDFAs in integrated
photonics
1990s
commercializatio
n begins
introduction of
traveling-wave SOAs
(TWSOAs),
introduction of
quantum-well
structures
fibre optic communication systems -
signal regeneration and wavelength
conversion
2000s
performance
enhancement
quantum-dot SOAs
(QD-SOAs),
polarization-insensitive
designs, reduced noise
figures
metro and long-haul networks,
all-optical signal processing
2010s
integration &
miniaturization
integration with
photonic integrated
circuits (PICs), hybrid
and monolithic
integration
on-chip optical networks,
all-optical logic and computing
2020s
advanced
materials & AI-
driven design
use of graphene, InP,
and novel
nanomaterials, AI/ML
for design optimization
quantum communication,
AI-optimized telecom and
datacenter systems
Future
ultra-fast,
quantum & green
photonics
ultrafast, low-energy
SOAs,
spintronic and quantum
SOAs
quantum networks, sustainable
photonic systems
From table 1, it is worth highlighting that before the advent of QD-SOAs, conventional semiconductor optical
amplifiers (using bulk materials or quantum wells) suffered from slow gain recovery (limiting data speeds),
temperature sensitivity (requiring coolers) and high signal distortion. The development of Quantum Dot SOAs
(late 1990s/early 2000s) leveraged 3D quantum confinement to enable ultrafast operation (femtosecond gain
recovery), temperature-insensitive performance, lower noise and reduced distortion [46 48]. This
breakthrough transformed optical communications, enabling high-speed (>160 Gb/s) signal processing,
energy-efficient photonic integrated circuits and robust amplifiers for next-gen networksestablishing QDs as
a cornerstone of modern photonics.
Another pivotal role of SOAs is in Photonic Integrated Circuits (PICs). Due to their compact size and
compatibility with semiconductor processes, SOAs can more easily be integrated with lasers, modulators and
detectors on-chip [25, 55]. This allows for the development of more compact, power-efficient and higher-
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performance optical systems for data centers and high-speed computing. This contrasts sharply with the bulky
other types of amplifiers previously mentioned, which can only be used for gain of course [39].
SOAs have now also entered the realms of optical sensing and biomedical imaging systems. For example, in
optical coherence tomography (OCT) [56], it has been shown that the SOAs broad bandwidth, compactness,
ruggedness, electrically pumped advantages, tunable gain capability and cost effectiveness were all factors
instrumental in providing the necessary broadband light for high-resolution OCT imaging. Of course, SOAs
themselves are not classical sensors like photodiodes or strain gauges - they do not directly measure
temperature, pressure, chemicals, etc. However, because they are very sensitive to changes in their
environment (like temperature, input optical power, bias current, and even surrounding refractive index), these
sensitivities can be used to detect changes [57]. In this work, the SOA acted as the active element enabling a
fibre ring laser to function effectively as a dynamic strain sensor, where strain-induced changes modulated the
laser output detected through the arrayed waveguide grating demodulator.
However, despite many advantages, SOAs still presently face challenges like high noise figures, polarization
sensitivity and gain saturation [47]. Many SOA polarization diversity schemes have recently been reported in
the literature [5861]. These modern works all produced polarization robustness, wide spectral gain, ultrafast
nonlinear dynamics with energy-efficiency. Current research on advanced SOA designs, such as quantum-dot
and quantum-dash structures, is now overcoming the aforementioned issues and extending performance [34].
This study demonstrated that quantum dot semiconductor optical amplifiers (QD-SOAs) effectively enabled
four-wave mixing (FWM) with high conversion efficiency and broad wavelength tunability. Thanks to the
unique properties of quantum dots, the SOA exhibited improved nonlinear performance compared to
conventional devices; such as wider wavelength conversion range and reduced signal distortion. These results
highlighted the potential of QD-SOAs as compact, high-performance components for all-optical wavelength
conversion and signal processing in next-generation optical communication systems.
In summary, the scope of the SOA is highly multidisciplinary, enhancing data transmission and enabling
complex operations in integrated photonics. Their continued development is critical to future next-generation
optical technologies.
THEORY
The theory of SOAs is based on semiconductor physics and optical wave propagation, and has been well
documented [42]. Similar to laser diodes, SOAs use a semiconductor gain medium but are designed to amplify
light without generating coherent light. They utilize stimulated emission, where incoming photons stimulate
excited electrons to drop energy levels, releasing more photons in the same direction and phase [39]. The
active region, often made of Indium Gallium Arsenide Phosphide (InGaAsP) or Indium Aluminum Gallium
Arsenide (InAlGaAs), becomes optically active when a forward bias injects carriers [55]. Light is confined
through waveguides in this active region. The achieved gain depends on the injected current, carrier density,
input power and wavelength. At high powers, SOAs experience gain saturation due to carrier depletion [19].
This mechanism can be seen in figure 1:
Fig. 1 SOA gain mechanism [62]
This figure illustrates the key characteristics of SOA gain dynamics and signal behavior. It highlights the
output signal, which includes Amplified Spontaneous Emission (ASE) and electrode-controlled left/right
inputs, as well as the output target, comprising the input facet, active layer, input signal, and ASE. The
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diagram also presents performance metrics such as gain (dB), output power (dBm) and saturation effects.
Together, these elements depict how an SOA amplifies optical signals while managing ASE noise, gain
saturation, and input-output power relationshipscritical factors in optical communication and signal
processing applications.
The theoretical gain of a SOA is typically given by G = exp(Γ · g · L), where Γ is the optical confinement
factor, g is the material gain coefficient (in cm⁻¹), and L is the length of the active region (in cm) [42]. Under
small-signal conditions, where input power is low, the gain simplifies to G₀ = exp(g₀ · L), with g₀ representing
the unsaturated material gain. At higher input powers, gain saturation occurs and the gain becomes power-
dependent, following G(P) = G₀ / (1 + P_in / P_sat), where G(P) represents the saturated gain of the
semiconductor optical amplifier (SOA) as a function of input power, P_in is the input optical power and P_sat
is the saturation power. Typical SOAs exhibit gains in the range of 10 to 40 dB, with gain coefficients from
100 to 2000 cm⁻¹ and device lengths between 200 µm and 2 mm. This SOA gain mathematics is shown in
figure 2:
Fig. 2 Gain versus input optical power in a semiconductor optical amplifier (SOA), illustrating small-signal
gain, gain saturation, and the typical exponential gain behaviour [42].
This mathematical framework forms the basis for understanding SOA performance in both linear and nonlinear
regimes, and is essential for the design and optimization of optical communication and signal processing
systems.
Previously mentioned nonlinear effects - like XGM, XPM and FWM - arise from carrier dynamics within the
SOA and are useful for wavelength conversion [20] and switching [22]. In [22], the authors presented a design
for a compact and energy-efficient optical switch based on SOAs. The nonlinear gain and fast carrier dynamics
of the SOA were used to achieve reconfigurability with low switching power. The proposed switch
demonstrated sub-nanosecond switching times and small footprint, making it suitable for integration into
optical networks where rapid, low-power switching is essential. This work highlighted the potential of SOAs
as versatile components for scalable, high-speed photonic switching applications.
A summary of SOA non-linearities is shown in table 2. They are primarily due to its unique gain saturation
characteristics, unlike the other amplifier types, rendering the device highly versatile in practical terms.
TABLE 2 Summary of SOA Non-Linear Applications
Nonlinear
Application
Description
Key Features/how
Applications
References
all-optical
switching
SOAs
enable fast
switching
without
converting
signals to
saturation of the
amplifier’s gain with
high input power
optical switching
networks
S. J. Savory at al., 2004)
[63], G. R. M. at al., 2001
[64]
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electrical
form
optical
regeneration
SOAs can
regenerate
signals by
reshaping
degraded
optical
pulses
non-linear gain
recovery due to
power saturation
long-distance
communication
M. A. T. F. at al., 2005
(https://doi.org/10.1364/JLT.2
3.000042), [65] R. P. Taylor
at al., 2009 [66]
wavelength
conversion
SOAs can
convert
signals to a
different
wavelength
using
nonlinear
effects
cross-phase
modulation (XPM)
and four-wave
mixing (FWM)
wavelength-
division
multiplexing
(WDM) systems
F. S. R. at al., 2003
(https://doi.org/10.1364/JLT.2
1.003614), [67] M. A. I. at
al., 2008 [68]
four-wave
mixing (FWM)
interaction
of multiple
optical
signals in an
SOA to
generate
new
frequencies
non-linear
interaction between
input signals
generation of new
optical channels,
signal processing
P. R. K. at al., 2006
(https://doi.org/10.1109/JLT.2
006.883929), [69] A. D. Ellis
at al., 2009 [70]
optical
parametric
amplification
(OPA)
SOAs can
be used in
optical
parametric
amplifiers to
amplify
weak
signals
parametric
amplification with
signal conversion
signal
amplification in
fibre optic
communication
P. R. Sharpe at al., 2010
(https://doi.org/10.1364/JLT.2
8.004706), [71] T. R. Chou at
al., 2006 [72]
cross-phase
modulation
(XPM)
non-linear
effect where
the phase of
one signal is
modulated
by another
signal.
intensity-dependent
phase shift,
dependent on signal
power
optical pulse
shaping, signal
processing
J. P. Yao at al., 2011
(https://doi.org/10.1109/JLT.2
011.2141707), [73] C. D. M.
at al., 2005 [74]
self-phase
modulation
(SPM)
a single
optical
signal
experiences
a phase shift
due to its
own
intensity
intensity-dependent
phase shift in the
SOA medium
pulse broadening,
soliton generation
C. M. DeAngelis at al., 2013
(https://doi.org/10.1364/OE.2
1.010509), [75] J. L. Silva at
al., 2007 [76]
supercontinuu
m generation
SOAs can
generate a
broad
non-linear mixing,
Raman scattering,
and self-phase
spectral
broadening for
metrology,
A. P. L. at al., 2010
(https://doi.org/10.1364/JLT.2
8.004170), [77] S. M. at al.,
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spectrum
from a
narrowband
source using
nonlinearitie
s
modulation
medical imaging
2006 [78]
optical logic
gates
SOAs can
implement
basic logic
functions
for optical
computing
non-linear switching
effects such as
AND, OR, and XOR
gates
optical
computing, signal
processing
S. S. Banerjee at al., 2005
(https://doi.org/10.1109/JSAC
.2005.850367), [79] P. C. G.
at al., 2004 [80]
brillouin
scattering
SOAs can
be used for
Brillouin
scattering
applications,
leading to
pulse
compression
or filtering
stimulated brillouin
scattering (SBS)
effect
pulse shaping,
noise filtering
J. T. F. at al., 2008
(https://doi.org/10.1364/JLT.2
6.002978), [81] K. S. at al.,
2012 [82]
non-linear
distortion
the
nonlinear
characteristi
cs of SOAs
can induce
distortions
harmonic
generation,
intermodulation
signal distortion
in optical
communication
systems
P. D. A. at al., 2011
(https://doi.org/10.1109/JLT.2
011.2120224), [83] N. A. R.
at al., 2013
(https://doi.org/10.1364/JLT.3
1.0033 [84]
Table 2 shows that SOAs leverage their inherent nonlinearities to enable a diverse range of advanced photonic
functions beyond simple amplification. Key applications include all-optical switching and logic gates (utilizing
gain saturation for ultrafast signal control), optical regeneration (exploiting nonlinear gain recovery to reshape
degraded pulses), and wavelength conversion (achieved via cross-phase modulation (XPM) or four-wave
mixing (FWM)). SOAs are also fundamental for FWM and optical parametric amplification (OPA) to generate
new frequencies or amplify signals, while XPM and self-phase modulation (SPM) facilitate critical signal
processing tasks like pulse shaping and soliton generation. Furthermore, their nonlinear properties enable
supercontinuum generation for broad-spectrum light sources and Brillouin scattering applications for pulse
compression and filtering, though they can also introduce undesirable non-linear distortion in communication
systems through effects like harmonic generation. Collectively, these capabilities make SOAs vital
components in optical switching networks, wavelength-division multiplexing (WDM) systems, long-haul
communication, optical computing, and specialized areas like metrology.
One of the most interesting and promising techniques for the future from SOA non-linearity phenomena from
table 2 is four-wave mixing (FWM), which has been highly referenced in the literature [25], [34], [37], [44],
[69], [70]. In [34], by optimizing the SOA design and operating parameters, the authors achieved enhanced
FWM efficiency with a wide conversion bandwidth and low power consumption; a conversion bandwidth of
10.8 nm (approximately 1.35 THz in frequency) with a peak conversion efficiency of 6.7 dB was reported
here. The principle of FWM is the non-linear optical interaction within the SOA which generates new
wavelengths from the interaction of two or more input waves [44]. This is shown in figure 3:
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Fig. 3 SOA FWM mechanism (44)
This figure shows four-wave mixing (FWM) in a nonlinear medium, such as an SOA, where two input
frequencies (
1
and
2
, represented by red and blue lines) interact to generate two new frequencies through
nonlinear optical processes. The labels "2
1
-
2
" and "2
2
-
1
" indicate the resulting FWM products, which
are created by combinations of the original frequencies arising from nonlinear interactions. Normally only one
sideband is used for the wavelength conversion. The side-bands are generated through the third-order
susceptibility (χ⁽³⁾), mediated by carrier density modulation and gain nonlinearities. The FWM power P₄ at ω₄ =
2ω₁−ω₂ scales as:
P |χ⁽³⁾|² P₁² P e^{(Γg − α)L}
where:
Γ = confinement factor
g = Material gain
α = loss coefficient
and L = SOA length
FWM efficiency depends on phase matching (Δk ≈ 0) and is degraded by carrier depletion and gain saturation,
evident in the figure's weaker FWM tones [42]. The process enables wavelength conversion but is inherently
power-limited due to the SOA's nonlinear dynamics, with χ⁽³⁾ peaking near the gain spectrum but suppressed at
high intensities.
SOA FWM has quite recently been shown to give best spectral efficiency and bandwidth of wavelength
conversion [86]. Here, using a QD-SOA, the authors exploited the inhomogeneous broadening in quantum
dots, enabling > 100 nm wavelength conversion bandwidth (vs. ~1020 nm in bulk SOAs) over the C and L
bands, together with <−10 dB conversion efficiency. Figure 4 shows the principal output of their work:
Fig. 4 ASE spectrum of the QD-SOA showing >100 nm bandwidth from C to L band, indicating
inhomogeneous broadening. [86]
SOA FWM also preserves phase and amplitude (good for advanced modulation formats) and allows
wavelength conversion in both directions (symmetrical). In [87], the authors demonstrated that the SOA
effectively preserved both the phase and amplitude of the optical signals, crucial for accurately converting
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advanced modulation formats such as quadrature phase-shift keying (QPSK) and polarization-multiplexed
QPSK signals. This research also highlighted the ability of SOA-based FWM to achieve symmetrical
wavelength conversion, facilitating bidirectional communication in optical networks. The SOA previous
sensitivity to polarization effects are these days increasingly becoming diminished [88]. In this very recent
work, the authors presented the design, fabrication and characterization of an SOA optimized for the O-band
(13101350 nm) with low polarization sensitivity - less than 1 dB polarization dependent gain (PDG) over a 25
nm bandwidth from 1312 nm to 1337 nm, suitable for integration into large-scale photonic integrated circuits
(PICs). Also, in [89], a novel scheme for wavelength conversion of orthogonal frequency division multiplexing
(OFDM) signals was introduced. This scheme leveraged FWM in an SOA to achieve cost efficiency,
polarization insensitivity and wide tunability. While the paper emphasizes the polarization-insensitive nature of
the proposed scheme, it did not provide specific quantitative metrics; such as polarization-dependent gain
(PDG) or polarization-dependent loss (PDL), to measure the degree of polarization sensitivity. However, the
authors supported their claims through analytical results and numerical simulations. Speed will also be even
more important in the future: the fastest SOA FWM ever achieved to date is 1 Tb/s (by simulation) [90] and
200 Gb/s (practically using a QD-SOA) [91]. Figure 5 shows these results achieved practically:
Fig. 5 Spectral output of pump, signal, and FWM-generated idler from a QD-SOA at ~200 Gb/s wavelength
conversion, demonstrating efficient conversion with preserved modulation format and phase integrity [91]
This work experimentally demonstrated error-free 200 Gb/s wavelength conversion using four-wave mixing
(FWM) in a quantum-dot semiconductor optical amplifier (QD-SOA), achieving record efficiency (-8.2 dB)
while preserving phase integrity. By leveraging the ultrafast carrier dynamics of quantum dots, the authors
showed high-quality NRZ-OOK signal conversion with clear eye diagrams and low power penalty, validated
through bit-error-rate (BER) measurements. Published in IEEE Photonics Technology Letters, this study
represented a significant advancement in all-optical signal processing, proving QD-SOAs as viable devices for
ultrahigh-speed optical communication systems.
For all these reasons the technique of FWM in an SOA has one of the highest potentials for future
wavelength conversion in current high-speed and coherent systems and in phase-sensitive applications (for
example: QPSK, 16-QAM [92]).
MANUFACTURING TRENDS
The evolution of SOA manufacturing has been marked by significant advancements in materials (e.g., GaAs to
quantum dots), performance (high gain, low noise, polarization insensitivity), and integration (compact PICs
for space and telecom). Modern SOAs now offer ultrafast switching (>160 Gbps), radiation-hardened designs,
and miniaturization, with Asia dominating production. Leading manufacturers like Coherent Corp. and
innovators such as Innolume push the limits in speed (640 Gbps QD-SOAs) and functionality, while cost and
weight advantages over EDFAs solidify SOAs’ role in next-gen optical systems.
a) Evolution
The evolution of the SOA over the years can be described under certain sections:
i) material innovations - early SOA devices were based on GaAs homojunctions operating at low
temperatures before they began to utilize materials like aluminum gallium arsenide (AlGaAs), operating
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around 830 nm [93]. The introduction of indium phosphide (InP) and indium gallium arsenide phosphide
(InGaAsP) materials then enabled operation in the 1.3 μm and 1.5 μm wavelength windows [94], a basic
window requirement for fibre-optic communications. Evolving then came the incorporation of quantum dots
(QDs), which has enhanced SOA performance - achieving faster gain saturation response times and improved
noise suppression [95].
ii) enhanced performance metrics - advancements then led to SOAs with gains exceeding 20 dB and
saturation output powers suitable for high-speed data transmission [96]. This paper reported on an SOA with a
massive 35 dB gain and 14 dBm saturation output power running at potentially 100 Gb/s. Implementing
strained quantum wells and optimized waveguide structures then resulted in lower noise figures, thereby
enhancing signal quality [97]. Additionally, design improvements, such as symmetrical waveguide structures
and tensile-strained active layers, have minimized polarization-dependent gain, making SOAs more versatile in
various applications [98]. This work achieved a polarization-dependent gain of < 0.5 dB (across the C-band)
and a wide gain bandwidth of > 50 nm across the C+L band while maintaining complete polarization
insensitivity. The principal results from this work are shown in figure 6:
Fig. 6 Small-signal gain spectra for TE and TM polarization modes in the optimized SOA, showing
PDG < 0.5 dB across the C+L band [98]
This figure plots the small-signal gain for transverse-electric (TE) and transverse-magnetic (TM) modes across
the C+L band, clearly demonstrating polarization-dependent gain (PDG) below 0.5 dB, thus confirming the
effective polarization insensitivity as described in the reference.
iii) integration and miniaturization - recent advances in photonic integration have incorporated SOAs into
photonic integrated circuits (PICs), such as InP-on-silicon membrane platforms, enabling compact and energy-
efficient amplification solutions [99]. This integration facilitates seamless interfacing with other optical
components, enabling sophisticated communication systems [100]. A 2022 report from NASA demonstrated
radiation-hardened SOA-based PICs with <1 dB polarization sensitivity, capable of operating across -40°C to
85°C and sustaining up to 100 krad of total ionizing dose. These robust PICs maintained high bandwidth under
extreme conditions, enabling high-speed optical systems to replace conventional RF technology in deep-space
missions such as Mars exploration. From this work, figure 7 shows the SOA-PIC gain stability under
cumulative radiation exposure.
Fig. 7 Optical gain stability of a radiation-hardened SOA-PIC under ionizing radiation up to ~100 krad,
showing <1 dB degradation—demonstrating robustness for space applications [100]
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This figure illustrates the optical gain stability of a radiation-hardened SOA-based photonic integrated circuit
(PIC) subjected to ionizing radiation up to ~100 krad. The gain shows less than 1 dB degradation, confirming
the PIC’s resilience and suitability for harsh space environments, as reported in the 2022 NASA study.
iv) advanced functionalities - beyond amplification, modern SOAs have been engineered for ultra-fast
switching and signal processing capabilities [101]. This thesis demonstrated sub-nanosecond (≤ 500 ps) all-
optical switching in SOAs, enabling > 40 Gbps operation with low penalty (<1 dB), while also developing a
numerical model to optimize carrier dynamics, achieving a > 20 dB extinction ratio and < 10⁻¹⁰ BER for WDM
applications. By exploiting rapid gain modulation, SOAs can perform all-optical signal processing tasks,
revolutionizing data routing and switching in optical networks [102]. Here, the authors theoretically and
experimentally analyzed the ultimate speed limit of a quantum-dot SOA for all-optical switching. They
successfully demonstrated picosecond-scale (110 ps) recovery times via ultrafast carrier dynamics
engineering, while identifying nonlinear gain compression and phase noise as critical bottlenecks for THz-rate
operation. Their models showed that SOAs could support > 160 Gbps switching in optimized configurations,
paving the way for terabit-scale photonic signal processing. The principal output of their work is shown in
figure 8:
Fig. 8 Time-resolved pumpprobe measurement of gain (or phase) recovery in a quantum-dot SOA, showing
sub-10 ps recovery and demonstrating ultrafast all-optical switching capabilities (>160 Gbps potential) [102]
This pumpprobe measurement from a QD-SOA illustrates ultrafast all-optical switching behavior: the gain
(and phase) recovers on a picosecond scale (approximately 1–10 ps). Such time-resolved traces confirm sub-
nanosecond switching capabilities with large extinction ratios and support the theoretical projections of
>160 Gbps to terabit-per-second performance.
b) Present Day SOA Manufacturing
Today, several Semiconductor Optical Amplifier (SOA) models have gained prominence in the industry due to
their performance, versatility, and integration capabilities. Here are some of the most widely adopted SOA
models currently in use:
(i) The 14BF 290 SOA by RPMC Lasers [103], shown in figure 9, is a high-power semiconductor optical
amplifier operating at 1310 nm, offering up to 450 mW output power and approximately 30 dB gain,
packaged in a 14-pin butterfly module with TEC, thermistor, and photodiode.
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Fig. 9 14BF-290 RPMC Lasers High Power SOA [103]
It is optimized for O-band optical communication, LIDAR, and sensing applications requiring high stability,
polarization-maintaining fibre, and robust thermal management.
(ii) InPhenix O-Band SOAs [104] currently deliver solid gain, respectable output power, low noise, and
polarization independencepackaged in robust, integration-ready modules, making them a strong choice
for modern O band optical systems. The currently available device is shown in figure 10:
Fig. 10 InPhenix’s 1310nm O-Band SOA [104]
(i) AeroDIODE currently offer a SOA for CW or pulsed operation in the range from 750 to 1550 nm
[105], as shown in figure 11:
Fig. 11 AeroDIODE SOA [105]
(ii) Box Optronics currently offer the 1310nm 10dBm SOA Semiconductor Optical Amplifier SM
Butterfly [106], shown in figure 12
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Fig. 12 1310nm 10dBm SOA Semiconductor Optical Amplifier SM Butterfly [106]
(iii) Thorlabs [107] currently offer SOAs operating from 780 to 1700 nm. Figure 13 shows one at 1700
nm.
Fig. 13 Thorlabs booster SOA operating at 1700 nm [107]
As of 2025, Coherent Corp. stands out as the world's largest manufacturer of SOAs [108], with the average
production time for a commercial SOA currently typically ranging from 8 to 16 weeks, depending on
complexity and supplier logistics. Currently Asia dominates the global Semiconductor Optical Amplifier
(SOA) market, accounting for approximately 7085% of production and sales (by volume). The smallest
commercially available SOA currently on the market is the Anritsu AA3T115CY [109], a 1310 nm chip carrier
type SOA. This ultra-compact device is specifically designed for integration into miniaturized optical
transceivers and photonic integrated circuits (PICs), making it ideal for applications where space is at a
premium. The dimensions of this particular device are: 3.5 mm × 2.5 mm × 0.9 mm (making it the smallest
commercial SOA as of 2024). Interestingly, on average the EDFA is 210 times heavier than an average SOA,
depending on power and packaging [4]. If weight is a critical factor (e.g., in aerospace or portable systems),
then SOAs are preferred [26]. However, for high-gain, low-noise applications (e.g., telecom), EDFAs still
dominate despite their much higher weight [6]. Regarding price, the current world average price of a single
stand-alone SOA (as of 2025) is estimated to be around 3.5k US dollars [103 107]. On average, an SOA
costs 510× less than an EDFA [108]. Regarding composition one key factor, particularly in light of their
manufacture these days, is that EDFAs totally depend on rare-earth-doped fibres for amplification [4], whilst
SOAs leverage semiconductor bandgap engineering, avoiding rare-earth materials entirely [42,93].
Regarding speed, the fastest semiconductor optical amplifiers (SOAs) demonstrated to date leverage quantum
dot (QD) technology to achieve unprecedented speeds [95]. Recent breakthroughs include p-doped InAs/InP
QD-SOAs achieving 640 Gbps all-optical switching with 0.3 ps carrier recovery, enabled by ultrafast carrier
depletion in optimized nanostructures [109]. For direct amplification, 400 Gbps operation with >25 dB gain
has been demonstrated in QD-SOAs, showcasing their potential for high-speed signal regeneration [110].
Theoretical work suggests even higher speeds are attainable, with plasmonic-enhanced SOAs incorporating
graphene predicted to reach 1.28 Tbps due to sub-picosecond nonlinear responses [111]. Commercial offerings
like II-VI’s QD-SOAs now support 320 Gbps signal processing [112], while Lumentum’s quantum well (QW)
SOAs deliver 200 Gbps PAM-4 amplification [113]. The primary limitations remain gain saturation at
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ultrahigh speeds and fabrication challenges for plasmonic hybrids. At the time of writing (2025), one of the
fastest commercially available SOAs is the Innolume SOA-1110-40-YYY-FA [114], featuring a >100 GHz
bandwidth and < 5 ps rise time, enabled by quantum-dot technology for ultrafast signal processing. Designed
for high-speed applications like coherent LiDAR and quantum communications, it delivers ~2025 dB gain
and 40 mW output power in the 10601120 nm range. While its premium performance comes at a cost
(~$15k–$25k), it’s a top-tier choice for systems requiring THz-class optical amplification beyond standard
SOAs. The device is shown in figure 14:
Fig. 14 Innolume SOA-1110-40-YYY-FA [114]
APPLICATIONS
Former Applications
The first studies on SOAs were conducted around the time of the invention of the semiconductor laser in the
1960s, with early devices based on GaAs homojunctions operating at low temperatures [93]. The arrival of
double heterostructure devices spurred further investigation into the use of SOAs in optical communication
systems. Zeidler and Personick [115] conducted early work on SOAs in the 1970s, laying the groundwork for
future developments. In the 1980s and early 1990s, the SOA continued to find limited but important roles -
mainly in experimental set-ups and niche applications where their compactness, electrical control and
integration potential began to offer unique advantages over bulkier fibre-based EDFAs [116]. However, the
first real key breakthrough development SOA paper was published in 1982 [117]. Simon’s 1983 study on
traveling-wave semiconductor laser amplifiers (TW-SLAs) revealed that these devices exhibit significant
polarization-dependent gain, with TM-polarized signals receiving higher amplification than TE-polarized ones.
Although TW-SLAs were designed to reduce feedback compared to Fabry-Pérot structures, Simon's
measurements demonstrated that polarization sensitivity remained a critical challenge. This finding
underscored the need for polarization control in optical systems and laid the groundwork for the development
of polarization-insensitive SOAs in subsequent years [118]. Figure 15 shows the principal output of [117] :
Fig. 15 Polarization-dependent gain in a traveling-wave semiconductor laser amplifier (TW-SLA), illustrating
higher gain for TM-polarized light compared to TE-polarized light. The gain disparity highlights the inherent
polarization sensitivity of early SOA designs [117].
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This figure shows a comparison of gain for TE and TM polarized light in a traveling-wave semiconductor laser
amplifier (TW-SLA). The vertical axis represents optical gain, while the horizontal axis denotes polarization.
Two separate lines illustrate that TM polarization experiences higher gain than TE, clearly demonstrating the
amplifier’s polarization sensitivity. A dotted reference line emphasizes the gain disparity, highlighting a key
limitation in early SOA designs for polarization-diverse systems.
Current Applications
Modern semiconductor optical amplifiers (SOAs) have significantly benefited from advancements in materials
and fabrication techniques, as detailed in Section 4. Today, they are increasingly employed in wavelength-
division multiplexing (WDM) systems for signal amplification, wavelength conversion, and optical switching
[119]. Their integration into photonic integrated circuits (PICs) allows for compact, chip-level systems
combining SOAs with lasers and detectors [120]. SOAs are emerging as a preferred solution for all-optical
signal processing, leveraging cross-gain modulation (XGM) [121], four-wave mixing (FWM) [122], and signal
regeneration for high-speed data manipulation. Beyond telecommunications, they are finding new applications
in biomedical sensing and imaging, such as optical coherence tomography (OCT), where they enhance weak
signal detection and reduce intensity noise. For example, in [123] an advanced swept-source design
incorporated a booster SOA, placed outside the main swept laser cavity. Figure 16 shows the experimental set-
up used here incorporating the BOA (booster SOA):
Fig. 16 experimental set-up used to incorporate a BOA (booster SOA) [123]
Panel (a) shows the system architecture, including a Fourier-domain mode-locked (FDML) laser followed by a
booster SOA placed outside the laser cavity. This SOA serves two roles: amplifying the light and flattening the
output spectrum. Panel (b) depicts how the optical bandpass filter selects and shapes a narrow spectral region
during the sweep. The booster SOA, in combination with the filter and polarization control, enables a broad,
flat, and coherent swept spectrum, which is essential for achieving high axial resolution in OCT imaging [123].
Another critical application is in Light Detection and Ranging (LiDAR) systems, where SOAs enable compact
Doppler-ranging devices as well as high-resolution mapping arrays [124], [125]. For instance, frequency-
modulated continuous-wave (FMCW) LiDAR, used in autonomous vehicles and drones, relies on SOAs to
detect motion via the Doppler effect [126]. These systems also support cartography and industrial inspection
applications [127]. Narrowband SOAs, often paired with distributed feedback (DFB) lasers, can deliver high
output power (>20 mW), extending their effective range [128]. In parallel, SOAs have also been exploited in
all-optical regeneration schemes, where quantum-dot SOAs provide improved signal reshaping and noise
suppression, thereby enhancing transmission reach and system reliability [129].
In optical communications, SOAs are now integral to 100G CFP/CFP2 ER4 modules, where they amplify
signals in the 1.3 μm band, enabling 40 km transmissions between data centers and mobile base stations [130].
Additionally, they serve as pre-amplifiers in long-haul systems, compensating for signal attenuation [16].
Theoretical modeling remains indispensable in SOA research, providing critical insights into their nonlinear
and dynamic behaviorkey to optimizing optical communication and signal processing systems. Early
foundational work by Connelly established comprehensive models incorporating gain saturation, carrier rate
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equations, chirp, and amplified spontaneous emission (ASE), forming the basis for commercial simulation
tools like VPIphotonics and OptiSystem [131], [132]. Connelly’s dynamic model remains widely cited for its
accuracy in predicting both steady-state and transient SOA performance. Building on this, his 2006 paper [132]
shifted focus to steady-state modeling of SOAs under continuous-wave (CW) conditions. This model captured
spatial variations of carrier density and optical fields along the SOA using coupled traveling-wave and rate
equations. Although it omitted ultrafast effects like TPA or SHB, it provided a robust framework for analyzing
gain saturation, ASE, and noise figure across a wide range of input powers and bias currents. This 2006 work
complemented the earlier 2001 dynamic model by addressing static performance metrics critical for amplifier
design, linking both works through a progression from time-domain to spatial-domain modeling for
comprehensive SOA analysis. Figure 17 shows three of Connelly’s simulations from his 2006 work:
Fig. 17 Simulated carrier density spatial distributions for TM polarised signal input powers of −40 dBm (solid
line), −10 dBm (dashed line) and 0 dBm (dotted line). The bias current and signal wavelength are 200 mA and
1550 nm, respectively. [132]
This figure illustrates how carrier density varies along the SOA for TM-polarized input powers of −40 dBm,
−10 dBm, and 0 dBm. At low input power, carrier density remains high and centrally peaked due to minimal
depletion. As input power increases, stimulated emission depletes carriers more significantly, especially near
the input facet, leading to a reduced and flattened carrier profile. This highlights the impact of input power on
gain saturation and SOA performance.
Further modelling contributions by Mecozzi, Antonelli, and Shtaif advanced further the understanding of
nonlinear effects such as cross-phase modulation (XPM), FWM, and gain-induced phase distortionsessential
for high-speed wavelength conversion and all-optical logic [133]. These models enabled practical
implementations, as demonstrated by Durhuus at al. and Joergensen at al., who later applied theoretical
insights to optimize SOAs in WDM systems [134, 135].
More recent modeling efforts support novel SOA architectures and functionalities. For example, Tang at al.
has designed a wide-gain-bandwidth, polarization-insensitive SOA using tensile-strained quantum wells,
validated through extensive simulations [136]. High-speed all-optical NOR gates have been modelled with
improved extinction ratios [137], while Kotb at al. have simulated SOA-based header processors using carrier
reservoir dynamics, highlighting the role of numerical tools in advancing optical logic [138]. Misra at al.
further refined state-of-the-art models, incorporating ASE noise, gain dynamics, and saturation effects to
bridge device physics with system-level integration [139].
Wang at al. demonstrated a breakthrough in Nature Photonics (2022) with an ultra-broadband MDM-SOA
supporting 6 spatial modes, achieving 92% efficiency improvement, <0.5 dB modal crosstalk, and 3.2 dB noise
figure across C+L bands (15201620 nm) through monolithic multi-core InP/InGaAsP integration, enabling
high-density optical interconnects. [140]. Additionally, Wang at al. also leveraged mode-division multiplexing
(MDM) modeling to achieve an 87% gain enhancement in SOAs, showcasing the potential for future
efficiency improvements [141]. Collectively, these studies underscore that theoretical modeling is not merely
supportive but foundationaldriving innovation, optimizing performance, and enabling SOAs to meet the
demands of both conventional and emerging photonic applications. The theory behind Wangs work in [141] is
shown in figure 18:
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Fig. 18 Simulated mode profiles in a multimode SOA showing efficient gain overlap via mode-division
multiplexing, enabling 87% gain enhancement [141].
This figure illustrates the core principle behind Y. Wang at al.'s achievement of 87% gain enhancement in
semiconductor optical amplifiers (SOAs) using mode-division multiplexing (MDM). It shows the bandgap
structure and simulated optical mode profiles for a multimode SOA supporting four spatial modes. The
visualized modal intensity distributions reveal how multiple guided modesbeyond the fundamentalcan
effectively overlap with the SOA's active region. By leveraging these higher-order modes, the design enables
simultaneous amplification across several spatial channels, effectively increasing the optical interaction length
without enlarging the device footprint. This innovative use of MDM marks a breakthrough in spatial gain
scaling, offering a compact and efficient path to boost SOA performance for high-capacity photonic systems.
Envisaged Future Applications
(i) Emerging roles in 5G, 6G, and THz communications
In advanced integrated photonics, ultra-compact SOAs will be embedded in silicon photonics platforms for
5G, AI, and IoT systems, with envisioned 6G deployments. Silicon-integrated SOAs have achieved 20 dB C-
band gain for 5G/IoT, addressing hybrid integration challenges using novel III-V/Si bonding techniques
crucial for WDM fronthaul, though still limited by thermal crosstalk in dense circuits [142]. Meanwhile,
quantum-dot-based SOAs have been extended into the terahertz (THz) domain for 6G networks, achieving >30
dB gain at 1 THz with a record-low 5 dB noise figure using plasmonic waveguide engineering and carrier
lifetime optimization [143]. These are considered transformative for ultra-broadband (Tbps) and ultra-low-
latency (sub-100 ns) communication, despite requiring cryogenic cooling and integration with RF electronics.
A schematic output of [143] is shown in figure 19:
Fig. 19 Plasmonic waveguide structure in a quantum-dot SOA enabling >30 dB gain at 1 THz and 5 dB noise
figure through strong field confinement and carrier lifetime engineering [143]
Figure 19 schematically depicts the metal-groove plasmonic waveguide structure that confines the
electromagnetic field tightly in the active region, enabling strong modal overlap with the quantum-dot
medium. This architecture, paired with carrier lifetime optimization, supports the record-breaking >30 dB gain
at 1 THz and 5 dB noise figure claimed in [143]. The tight plasmonic confinement is central to achieving both
high gain and low noise in a compact SOA suited for ultra‑broadband, low‑latency 6G communication
applications.
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(ii) Quantum communication and satellite integration
Quantum communication technologies have successfully leveraged quantum-dot semiconductor optical
amplifiers (QD-SOAs) to achieve remarkable performance metrics, including noise figures below 2 dB and
entanglement degradation under 0.5 dB, enabling robust 300 km quantum key distribution (QKD) links and 10
Gbaud phase-sensitive regeneration for on-chip quantum repeaters [144]. In satellite applications, QD-SOAs
have proven particularly valuable due to their lightweight, low-power characteristics, facilitating both deep-
space and inter-satellite communications [145]. Building on these advancements, recent work [146] has
demonstrated how machine learning can optimize quantum dot superlattices (QDSLs) to further enhance SOA
performance. By employing neural networks trained on 1,000 simulated quantum dot configurations,
researchers achieved a 25% improvement in optical efficiency and 15% broader photonic bandgaps through
precise tuning of structural parameters like lattice constant and inter-dot spacing. The model's high predictive
accuracy (MAE: 0.05 eV for bandgap frequency) enables tailored QD-SOA designs with improved gain
efficiency, reduced noise, and superior scalability for terabit-scale optical networks. While these machine
learning-optimized QDSLs show tremendous promise for classical communication systems, their potential
applications in quantum and satellite communications remain to be experimentally validated. The optimization
framework's effectiveness is clearly demonstrated in Figure 20, which illustrates key aspects of the ML model
including training convergence, prediction accuracy, and parameter sensitivity analysis, providing valuable
insights for future high-performance optoelectronic device design
.
Fig. 20 Machine learning optimization results showing (i-ii) convergence, (iii) prediction accuracy, and (iv-v)
parameter sensitivity for quantum dot superlattice photonic properties. [146]
Figure 20 displays the machine learning model's performance in optimizing quantum dot superlattices,
featuring: (i-ii) training and validation loss curves showing stable convergence with minimal overfitting; (iii)
close alignment between predicted and actual photonic bandgap values; (iv) feature importance analysis
identifying lattice constant (*a*) and inter-dot spacing (*d*) as key design parameters; (v) the relationship
between quantum dot radius and bandgap frequency; (vi) parameter nos. vs. model performance. This research
demonstrates how machine learning-optimized quantum dot superlattices can significantly enhance SOA
performance by simultaneously achieving: (1) precise bandgap engineering (R²=0.99) for tailored gain spectra,
enabling wavelength-specific amplification with 30% broader bandwidth than quantum well SOAs; (2)
optimized quantum dot arrangements that reduce ASE noise by 2 dB while maintaining high gain coefficients
(>30 cm⁻¹); and (3) real-time design capabilities that accelerate SOA development cycles from months to days.
These advancements address critical SOA limitations by providing superior gain flatness across C+L bands,
improved noise characteristics, and unprecedented design flexibility - ultimately enabling next-generation
optical amplifiers with performance metrics beyond current industry standards.
(iv) Quantum-dot SOAs and reflective architectures
Enhanced modeling of quantum-dot reflective SOAs (QD-RSOAs) using coupled rate equations and
inhomogeneous broadening (IHB) has demonstrated improved phase recovery and ASE suppression [147].
Also, doping-engineered QD-RSOAs have achieved 40 Gbaud operation with 160° phase shift and 8 dB ASE
suppression by managing IHB [148].
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(iv) Performance optimization and integration strategies
Key future technology goals include boosting output power through tunable QD-SOAs [149], enhancing
efficiency for next-generation 6G THz applications [150] and minimizing nonlinear distortions using AI-based
predistortion [151]. Recent work on supervised-learning predistortion has demonstrated nonlinear reduction of
~15 dB, enabling 64-QAM transmission at 3032 Gbaud with less than 1 dB penalty [151]. Novel device
architectures [152] and hybrid integration strategies [153] are continuing to improve SOA performance. For
example, heterogeneous IIIV/SiN SOAmodulator pairs have been demonstrated for advanced signal
processing and optical neural network applications, achieving ultralow insertion loss and high-speed operation
[154].
(v) Thermal regulation and high-speed operation
Thermal stabilization remains critical for reliable SOA deployment in harsh environments. Microfluidic
cooling and dual-active-layer quantum well structures have enabled stable operation across wide temperature
ranges with minimal performance penalty, supporting deployment in subsea and aerospace systems [155]. In
parallel, graphene-plasmonic SOAs with footprint dimensions on the order of 10 µm have shown potential to
deliver >100 GHz bandwidth with low noise figures, opening pathways toward distortion-free transmission in
ultrahigh-speed links [156]. More broadly, Tang at al. [157] reviewed advances in high-power SOAs operating
in the 1550-nm band, reporting significant improvements in saturation output power (up to ~757 mW), gains
exceeding 20 dB, and stable thermal behavior, enabled by optimized multi-quantum-well structures and
effective heat management. These developments help to address the long-standing trade-off between gain,
noise, and output power in SOA design, thereby supporting next-generation coherent communication systems
for 100G/400G+ WDM transmission. Figure 21 illustrates representative gain performance trends and output
power scaling from such state-of-the-art devices.
Fig. 21 Representative performance of high-power SOAs as reported by Tang at al. [157]: (a) gain response
showing peak gains >20 dB, and (b) output power scaling with saturation levels approaching ~757 mW, both
enabled by optimized quantum-well structures and advanced thermal management.
(vi) AI control, neuromorphic systems, and health monitoring
AI-integrated SOAs are emerging as key enablers for dynamic gain control, nonlinearity mitigation, and
autonomous photonic networks. Reinforcement learning (RL) has achieved ±0.1 dB gain stability under traffic
load variations of 10–90%, with adaptation times below 50 μsan order of magnitude faster than conventional
PID controllers [158]. Long short-term memory (LSTM) neural networks have been applied to pre-distort SOA
nonlinearities such as cross-gain modulation (XGM) and four-wave mixing (FWM), enabling 800 G dual-
polarization 64-QAM transmission and reducing the bit error rate (BER) to below 1 × 10⁻⁶ even across device
aging conditions [159]. Furthermore, SOA-based spiking neural networks have demonstrated energy
efficiencies on the order of 10 pJ/spike with spike propagation delays of ~100 ns, underscoring their suitability
for neuromorphic photonic AI accelerators [160]. In large-scale multi-vendor optical networks, federated
learning has been applied for proactive SOA failure detection, achieving 90% fault prediction accuracy up to
24 hours in advance and contributing to a 40% reduction in service outages [161]. On the quantum side,
variational autoencoders (VAEs) have been used to model SOA noise in continuous-variable quantum key
distribution (CV-QKD) systems, extending secure transmission distances by 30% to 250 km while maintaining
excess noise levels below 0.1% [162]. International initiatives such as DARPA’s Optical Integrated Photonic
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Accelerators (OPTICA) program and Horizon Europe’s Quantum Photonic Integrated Systems (QPIS) are
accelerating the development of SOAAI co-processors with 1 ns response times and footprint reductions of
up to 50% in monolithically integrated SOASiN QKD repeaters, with pilot production anticipated by 2026
[163].
(vii) Competing with EDFAs: advanced architectures
SOAs are increasingly competing with EDFAs through breakthroughs in quantum-dot (QD) engineering and
photonic integration. In [164], a QD-SOA demonstrated fibre-to-fibre gain as high as 35 dB and a noise figure
of 5.2 dB across a broad 60 nm amplification bandwidth (15201580 nm). These performance characteristics
overlap with the lower end of commercial EDFAs, while preserving the fabrication and integration advantages
of semiconductor technology. As illustrated in Figure 22, the spectral performance of the C-band QD-SOA
shows a gain spectrum that peaks near 35 dB while remaining relatively flat, accompanied by a noise figure
that stays below 6 dB across the 15201580 nm range and reaches a minimum of 5.2 dB at the wavelength
corresponding to maximum gain:
Fig. 22 spectral performance of a C-band QD-SOA showing (a) fibre-to-fibre gain peaking at ~35 dB and (b)
noise figure below 6 dB across 1520–1580 nm, with a minimum of 5.2 dB at peak gain [164].
Such performance echoes earlier demonstrations by Sugawara at al. [96], who reported near-EDFA-equivalent
gains of 3050 dB using stacked quantum-dot layers, and aligns with more recent results by Sato [157].
Together, these results highlight the feasibility of QD-SOAs as compact, broadband, and efficient amplifiers
that approach the noise and gain performance of EDFAs.
NTT previously projected that a hybrid QD-SOA/Raman amplifier capable of 40 dB gain would be
demonstrated by 2025, combining the compact, low-noise characteristics of quantum-dot SOAs with the high-
power broadband gain of Raman amplification. However, as of mid-2025, no public results have yet been
disclosed. Takada at al. [165] emphasize that quantum-dot SOAs remain particularly promising for access and
metro networks, offering superior temperature stability and integration potential, though realizing ultra-high-
gain devices remains challenging due to noise suppression and packaging constraints. Nevertheless, NTT’s
roadmap continues to target sub-5 dB noise performance at 25 dBm output power by 2026, and envisions fully
integrated photonic platforms by 2030, potentially positioning QD-SOAs to rival EDFAs even in long-haul
transmission through more compact and cost-effective amplifier architectures.
Quantum-dot semiconductor optical amplifiers (QD-SOAs) have demonstrated significant performance
improvements, with gain bandwidths extending beyond 150 nm, noise figures below 4 dB, and saturation
output powers reaching tens of dBm under optimized conditions [166]. Sub-picosecond gain recovery
dynamics have been observed, making them well-suited for ultrafast operation in the C+L bands. Multi-stage
and tapered SOA designs, including those with optimized current injection profiles, have been shown to
mitigate nonlinear distortions and enhance gain uniformity in high-speed modulation environments [167].
Hybrid amplifier architectures that combine SOAs with EDFAs or Raman amplifiers exploit the fast carrier
dynamics of SOAs alongside the high output power and low noise characteristics of fiber amplifiers,
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supporting long-haul transmission and dynamic gain equalization [168]. More recently, integration of QD-
based SOAs directly onto silicon substrates has achieved on-chip gains exceeding 30 dB and high saturation
output power, demonstrating a pathway toward compact, fully integrated photonic transceivers [169].
Phase-sensitive and Raman-enhanced SOAs have exceeded conventional gain and noise limits. In [170],
Raman-assisted SOAs achieved a massive 60 dB gain and a 2 dB noise figure using stimulated Raman
scattering and dual-band filtering. This design also achieved flat gain across 40 nm and <0.5 dB penalty in 200
Gbaud PAM-8 over 80 km. The measured results of this Raman-assisted SOA are shown in Figure 23, where
panel (a) demonstrates a flat fibre-to-fibre gain of ~60 dB across 15301570 nm and panel (b) shows a noise
figure consistently around 2 dB. This combination of ultra-high gain and low noise supports advanced
modulation formats, highlighting the potential of hybrid Raman-enhanced SOAs for ultra-fast, low-noise
optical links:
Fig. 23 Measured performance of the Raman-assisted SOA reported in [170], showing (a) flat fibre-to-fibre
gain of ~60 dB over 1530–1570 nm and (b) noise figure consistently around 2 dB across the band [170].
(viii) Toward intelligent and polarization-insensitive designs
AI-controlled SOAs using RL and CNN-guided microfluidics have achieved ±0.05 dB gain stability within
500 ns and 0.01 °C thermal precision, reducing packet drops by 40% in Microsoft Azure’s 400ZR+ network
[171]. In [172], Williams at al. demonstrated a high-performance quantum-dot SOA achieving <0.5 dB
polarization-dependent gain, 80 nm bandwidth (15301610 nm), and >30 dB gain with <6 dB noise figure
through asymmetric quantum dot stacking and tapered active region design. Validated with 32 Gbaud DP-
QPSK transmission (BER <1e−12), this device enabled DWDM with 50 GHz spacing while maintaining ±1
dB gain flatness. The experimental results are shown in Figure 24, where panel (a) shows >30 dB gain with ±1
dB flatness across 15301610 nm, and panel (b) shows polarization-dependent gain below 0.5 dB across the
full band:
Fig. 24 Measured performance of the QD-SOA, showing (a) >30 dB gain with ±1 dB flatness over 1530
1610 nm and (b) polarization-dependent gain <0.5 dB across the full bandwidth [172].
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(ix) Roadmap for terahertz and quantum applications
Recent surveys of terahertz photonics highlight the potential of semiconductor optical amplifiers leveraging
quantum-dot, plasmonic, and hybrid-silicon platforms to extend usable bandwidths well beyond 200 GHz. For
example, Burla at al. demonstrated a plasmonic MachZehnder modulator with 500 GHz bandwidth,
illustrating a path toward future 1 THz-class photonic amplifiers by the next decade [173]. In atomic sensing,
photonic systems based on compact semiconductor lasers have matched or surpassed traditional EDFAs in
integration and robustness. Hao at al. reported a portable, laser-pumped rubidium atomic clock using a DFB
laser with sub-MHz linewidth, high frequency stability, and a volume of only 250 c, representing a major
step toward deployable quantum timing systems [174]. Further advances have combined narrow-linewidth
DFB master oscillators with amplification and active frequency stabilization. Zhang at al. demonstrated an
ultranarrow linewidth photonic-atomic laser by locking a semiconductor system to a rubidium vapor reference,
achieving ~25 Hz linewidth and excellent stability in a compact format suitable for cold-atom interferometry
and portable optical clock applications [175]. Figure 25 illustrates such a stabilized DFB-SOA laser concept,
integrating high-power amplification and atomic feedback to achieve sub-MHz linewidth stability in a robust,
field-deployable package:
Fig. 25 Frequency-stabilized DFB-SOA laser system integrating a DFB oscillator, >1 W SOA amplifier, and
atomic-reference feedback control for sub-MHz linewidth stability in portable cold-atom applications [175].
The pursuit of ultra-high gain SOAs to rival EDFAs has spurred global efforts, with roadmaps targeting 4050
dB gain through novel architectures. Intel Labs projects 40 dB by 2026 using multi-stage quantum-well SOAs
with digital linearization [176]. Fujitsu and TU Eindhoven’s hybrid SOA-Raman design aims for 50 dB by
2027 [177], while global R&D roadmaps project that novel amplifier architectures will target gains of 40-50
dB within the coming years [178]. For THz frequencies (0.51 THz), recent surveys highlight that antenna
technologies are rapidly advancing toward the high-gain levels required for 6G backhaul and quantum sensing.
In particular, Jiang at al. [179] emphasize that experimental THz antennas have already achieved gains
approaching 30 dB, with projected targets of ~35 dB by 2030 to support Tbps-class links and emerging sensing
applications. This trajectory aligns with the requirements of 6G networks, where ultra-high-capacity wireless
backhaul and precise quantum-enhanced metrology will rely critically on such performance benchmarks.
Figure 26 illustrates the extrapolated trend in THz antenna gain from 2023 to 2030, highlighting the projected
milestone of ~35 dB gains necessary to enable 1 Tbps backhaul and quantum-grade sensing [179].
Fig. 26 Projected THz antenna gain from 2023 to 2030, targeting 35 dB to enable 6G backhaul and quantum
sensing [179].
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Also, in the future, semiconductor optical amplifiers (SOAs) could play transformative roles across law
enforcement, aviation, drone operations, and nuclear industries by enhancing high-speed optical
communication, ultra-sensitive sensing, and secure data transmission. For law enforcement, SOAs can
significantly improve LiDAR performance. In particular, Zhang at al. [180] demonstrated a high-output-power
distributed Bragg reflector (DBR) laser integrated with an SOA for FMCW LiDAR, achieving enhanced range
and signal qualitypromising for surveillance, forensic spectroscopy, and even anti-drone laser counter
measures. In aviation and drones, SOAs may strengthen free-space optical (FSO) communication, which is
vital for high-throughput, real-time drone swarming and navigation. Hong at al. [181] recently proposed an
SOA-based multilevel polarization-shift on-off keying (MPS-OOK) transmission technique, which improves
spectral efficiency and system robustness for FSO links. For nuclear applications, robust monitoring
technologies are essential. While dedicated SOA designs for radiation environments are still emerging,
advances in radiation-hardened fiber-optic sensors have shown resilience for nuclear reactors and robotic
control in hazardous zones [182], [183]. Incorporating SOAs into such systems could eventually enable
amplified, secure, and radiation-tolerant optical communication in nuclear facilities. By addressing technical
challenges such as thermal stability and integration costs, SOAs are positioned to become key enablers in next-
generation security, transportation, and industrial safety technologies.
In summary, SOA technology is on an exciting trajectory. With advances in theoretical modelling, novel
materials, and AI-guided design, SOAs provide scalable, efficient, and compact optical amplification suitable
for next-generation communication infrastructures, including quantum systems. Their wide wavelength
compatibility and integration flexibility make them serious contenders to EDFAs. While EDFAs dominated
research during the telecom boom of the 1990s2010s [184], SOAs have surged in integrated photonics,
quantum-dot designs, and 6G applications in the 2020s. Current bibliometric studies indicate SOA-related
publications are growing faster than EDFA-related work, reflecting their versatility in emerging fields such as
LiDAR, optical computing, and quantum communications [185].
CONCLUSIONS
Based on the results in this paper, the future of the SOA can really be summed up in two parts as a
competitive standalone device, and as an integrated device:
(i) standalone device:
SOAs are now increasingly central to photonic and communication systems and, as fabrication technology
advances exponentially with time, they will eventually reach ever smaller scalesintegrating into nanoscale
and on-chip systems. Rapidly advancing R&D will elevate their gain, reduce their noise, and continue to
produce high-performance variantssuch as multi-quantum well, quantum-dot, and nanostructured SOAs
now already achieving 30–35 dB gain, matching that of EDFAs. Once used primarily for amplification, SOAs
will continue to support a myriad of multi-functions such as wavelength conversion and switching with
complete integration into photonic circuits, continuing to improve their service to telecommunications, data
centers, sensing, and imaging.
(ii) integration:
In the future, semiconductor optical amplifiers (SOAs) will form the foundation of advanced hybrid
amplification systems by being intelligently combined with other amplifier technologies to create optimized,
multi-functional solutions. These hybrid configurations will see SOAswith their compact footprint, fast
response time, and broad wavelength coverageintegrated with specialized amplifiers like EDFAs for low-
noise C-band performance, Raman amplifiers for distributed ultra-low-noise gain, and rare-earth-doped
amplifiers for specific wavelength ranges. The SOA will serve as the tunable "smart" component in these
hybrids, providing rapid gain adjustment and signal processing capabilities through its inherent nonlinearities
and compatibility with electronic control, while the other amplifier types compensate for traditional SOA
weaknesses like higher noise and lower output power. This synergistic approach will enable unprecedented
system flexibility, allowing dynamic reconfiguration for different transmission bands (O-to-U-band),
modulation formats, and network conditions. Such SOA-centric hybrid amplifiers will be particularly crucial
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for emerging applications like adaptive metro/access networks, space-division multiplexing systems, and
integrated quantum photonic circuits, where the combination of SOA's integrability with other amplifiers'
specialized properties can overcome the limitations of any single amplification technology.
In summary it has not been possible to consider all published papers on SOAs in a short review, but
collectively all the evidence gathered and presented in this paper from key works suggests that adaptive SOAs
will excel as the intelligent core of hybrid systems in the future - enabling ultra-broadband, adaptive
amplification through integration with EDFAs, Raman, and quantum dot technologies. They will also thrive as
standalone solutions in applications demanding compact size, fast reconfigurability, and cost-efficiencysuch
as short-reach interconnects, LiDAR, and photonic AI chips where integration isn’t critical.
Ultimately, the SOA will not just be a supplement to existing amplifier technologiesit could be their
successor. With gain, bandwidth, noise and integration metrics rapidly approaching or surpassing those of
EDFAs, and with unmatched advantages in size, tunability, and CMOS compatibility, SOAs are poised to fully
replace EDFAs across a growing number of applications. This transition is not merely theoreticalit is already
underway in integrated photonics, quantum communications, and THz systems. In the far future, SOA-based
technologiesenhanced by quantum-engineered materials and nanophotonic breakthroughswill achieve
noise figures and output powers that rival or exceed those of EDFAs, while maintaining their native
advantages: chip-scale integration, THz-bandwidth tunability and energy efficiency orders of magnitude
beyond today’s rare-earth doped amplifiers. As a consequence, in an age where technology will be the norm,
the dominance of EDFAs in optical amplification will gradually fade, giving way to the era of the SOAa
technology that is not only more adaptable, but ultimately more aligned with the demands of future photonic
systems.
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