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International Journal of Research and Innovation in Applied Science (IJRIAS) |Volume VII, Issue X, October 2022|ISSN 2454-6194

Degradation Mechanisms and Lifetime Modeling of Power Semiconductor Devices

Mohammad Ariful Islam
Sylhet Gas Fields Ltd, Bangladesh

IJRISS Call for paper

Abstract: Lifetime modeling and predicting for power semiconductor devices has become important due to higher demands on reliability and economy, i.e. to save time and money. Understanding the degradation mechanisms of such devices in a complex interplay of thermal, mechanical, and electrical loading in often harsh environment is a very challenging task, involving the competences of electronic engineers, simulation experts, materials scientists, physicists and mathematicians – with the final goal to permit accurate prediction of failure probabilities in the ppm-range as a function of time. In this review paper, I’ve discussed previously published literature on degradation mechanisms, experimental results obtained in several studies, lifetime prediction procedure, lifetime model and some preventive measures that can be taken against permanent damage.

Key-words: Degradation mechanism, Semiconductor lifetime, linear models, Bayesian regression


Since the invention of uncommon semiconducting behaviors of Si and Ge, a lot of semiconductor devices have been playing a diversified role on our modern life. Switching, amplifying, energy conversion, modern communication devices including display devices are some examples. In the beginning times, these devices were carefully modeled and structured from theoretical level to the industrial or implementation level. With the advancement of time and the growing needs for fashionable as well as dynamic consumers, those devices have been upgraded to mini, micro and even nano level. Traditional BJT has been upgraded to TFT, then Organic structure. As the models, mechanisms, technology are increased, same is the acute competition among the investors or manufacturers. Despite (careful model/design, fabrication method), there’re questions on device reliability-how long they sustain, or how fine is performance. After having finished an attractive performance, some devices become fractured, shorted or burned or even decomposed (electronic waste) as well as their inside mechanisms. There’re some other dimensions of device degradation also.
The power semiconductor devices have been grouped into following two categories:
i. The old or conventional devices i.e. power diode, thyristor, TRIAC, GTO, BJT and power MOSFET.
ii. Modern power devices i.e. IGBT, SIT, SITH, MCT, IGCT and COOLMOS etc.