Dual Chemically Synthesized Tin (IV) Di-lead Tetraoxide (SnPb2O4) Alloyed Thin Films

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International Journal of Research and Innovation in Applied Science (IJRIAS) | Volume V, Issue VI, June 2020 | ISSN 2454-6194

Dual Chemically Synthesized Tin (IV) Di-lead Tetraoxide (SnPb2O4) Alloyed Thin Films

  Joseph Ijeoma Onwuemeka
Imo State University, Owerri, Nigeria

IJRISS Call for paper

Abstract:- SnPb2O4, alloyed thin films were successfully deposited on glass substrates using dual solution synthesis under the deposition condition of 60oC of NaOH solution. The deposited alloyed samples were annealed between 100oC to 250oC using Master Chef Annealing Machine. The crystallographic studies were done using X-ray diffractometer (XRD) and scanning electron microscope (SEM). The XRD pattern of SnPb2O4 alloyed thin films of samples A11 and A12 with one diffraction peak at 2θ = 22.300 with corresponding Miller indices (111) and the grain size of the alloys is 92.29nm. SEM results show that sample A11 and A12 have high porosity and roughness which may be due to vaporization of water. Rutherford backscattering Spectroscopy ( RBS) analysis confirmed the percentage of the elements of , lead, tin, and oxygen in the alloyed thin films samples. The optical characterization was carried out using UV-1800 series, double beam spectrophotometer. Sample A11 of SnPb2O4 alloyed thin films annealed at 2500C, shows optical transmittance of 30%-65% in the ultraviolet region, 66%-76% in the visible, and 76%-80% in the near-infrared regions of electromagnetic spectrum. Sample A12 annealed at 200 oC has an optical transmittance of 27% -70% in the ultraviolet region, 71% -80% in the visible and 81%-86% in the near infrared regions of electromagnetic spectrum. The two samples, have direct average wide band gap of 3.65±0.05eV.
Keywords: optical transmittance, characterization, ultraviolet region, band gap