New Boron Deposition Model Based on Thin Oxide Film in Process of High Frequency Transistor

This paper reports new deposition model of boron impurity considered formation of oxide film during deposition process. Finally, we have considered the impurity concentration change in silicon surface and found that diffusion coefficient in the thin oxide film increases more 100 times than the thick oxide film. The result contributes to get the accurate simulation value. This new boron deposition model will apply to find the formation condition of base layer in fabrication process of high-frequency transistor.

Boron impurity; Deposition model; Concentration distribution; Diffusion coefficient

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