Modification of the Electrical Properties of Sb/Al Bilayer Irradiated with Low Energy Krypton Ion Beam

Sb (~50nm) over Al (~50nm) thin films were sequentially deposited on the silicon substrate in the current work using the e-beam evaporation method at a pressure of 2×10-5 mbar. Next, a 350 KeV Kr+1 beam with a fluence of 3×1016 ions/cm2 was used to irradiate the Sb/Al bilayer. Seebeck coefficient and Resistivity measurements were carried out on Pristine and Irradiated samples and results were compared.

Aluminium Antimonide, Ion Beam mixing, Seebeck Coefficient, Resistivity

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