Structural Modifications of Indium Over Selenium Bilayer Under the Irradiation of Low Energy Kr Ion Beam

In the present work In (~50nm)/Se (~50nm) and Se(~50nm)/In(~50nm) thin films were deposited successively on the glass substrate by thermal evaporation method under 1×10-5 mbar pressure at room temperature. The In/Se bilayers were irradiated with low energy ion beams of 350 Kev Kr+1. This sample was then characterised by High resolution XRD (HRXRD). HRXRD study reveals phase formation in Pristine sample where indium is on uppermost layer. So the experiments of Selenium over Indium were not executed further. Rutherford backscattering spectrometry (RBS) and SEM of the samples were also carried out. RBS shows mixing at Pristine sample. The Pristine annealed sample shows insulator property.

Ion Beam Mixing, RBS, Indium Selenide

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