Optical Property of Fe+2 Ions implanted Silicon Substrate
Authors
sharad.tripathi@gnkhalsa.edu.in (India)
Article Information
DOI: 10.51244/IJRSI.2026.1309000075
Subject Category: material science
Volume/Issue: 13/9 | Page No: 1102-1104
Publication Timeline
Submitted: 2026-09-19
Accepted: 2026-09-24
Published: 2026-10-06
Abstract
Chemically cleaned Semiconductor thin films of silicon (Si) were implanted with 200 keV Fe+2 ions with various fluences and characterized by using Fourier Transform Infrared Spectroscopy. The decrease in transmittance is due to mixing of iron ions near to surface of silicon samples layer which is less transparent as compared to virgin sample and also revealed the different sizes of clusters formed in samples.
Keywords
Silicon (Si), Fe+2 ion, implantation, FTIR spectroscopy
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References
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