Optical Property of Fe+2 Ions implanted Silicon Substrate

Authors

Sharad Tripathi

sharad.tripathi@gnkhalsa.edu.in (India)

Article Information

DOI: 10.51244/IJRSI.2026.1309000075

Subject Category: material science

Volume/Issue: 13/9 | Page No: 1102-1104

Publication Timeline

Submitted: 2026-09-19

Accepted: 2026-09-24

Published: 2026-10-06

Abstract

Chemically cleaned Semiconductor thin films of silicon (Si) were implanted with 200 keV Fe+2 ions with various fluences and characterized by using Fourier Transform Infrared Spectroscopy. The decrease in transmittance is due to mixing of iron ions near to surface of silicon samples layer which is less transparent as compared to virgin sample and also revealed the different sizes of clusters formed in samples.

Keywords

Silicon (Si), Fe+2 ion, implantation, FTIR spectroscopy

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References

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